CE00261-7 Power Semicondutor Devices

This module focuses on power semiconductor devices such as power diodes, Transistors, Thyristors, GTOs and IGBTs. It covers the necessary theoretical and practical knowledge needed to characterise and utilise these devices in different applications including power electronic systems.
1. Fundamentals of semiconductors: semi conducting materials, charge carriers, transport, lifetime, temperature dependence.
2. Power Diodes: Junctions and interfaces, leakage current, avalanche breakdown, punch- through, PIN diode, Forward and reverse bias, switching transients, forward and reverse recovery, the Schottky barrier diode.
3. Power transistors BJT's: structure, operating regions, emitter injection efficiency, base transport factor, static and dynamic characteristics.
4. Power MOSFETs: structure, static blocking, forward conduction, switching performance
5. Thyristors: Structure and Operation, static blocking, forward conduction, switching characteristics, dv/dt capability, L.T.T., self-protection, G.T.O.
6. IGBTs: Structure and Operation, static blocking, forward conduction, switching characteristics.
7. Reliable Operation: Thermal resistance and transient thermal impedance, packaging of P.S.D, series and parallel operation.